1 cxxxut190-sxxxx-31 chip diagram features ? small chip C 190 x 190 x 50 m ? ut led performance C 450 & 460 nm C 12 mw min. C 470 nm C 10 mw min. C 527 nm C 3.0 mw min. ? low forward voltage C 2.9 v typical at 5 ma ? single wire bond structure ? class 2 esd rating applications ? mobile phone keypads ? audio product display lighting ? mobile appliance keypads ? automotive applications cree ? ultrathin? gen iii leds data sheet cxxxut190-sxxxx-31 crees ultrathin leds combine highly effcient ingan materials with crees proprietary g?sic ? substrate to deliver superior price/performance for blue leds. these vertically structured led chips are small in size and require a low forward voltage. crees ut? series chips are tested for conformity to optical and electrical specifcations and the ability to withstand 1000 v esd. applications include keypad backlighting where sub-miniaturization and thinner form factors are required. dat a sheet: cpr3ep rev a top view bottom view 190 x 190 m t = 50 m anode (+) 85-m diameter die cross section cathode (-) 80 x 80 m bottom surface 150 x 150 m junction 160 x 160 m subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c notes 1&3 cxxxut190-sxxxx-31 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1 khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 5 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5 v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ut190-sxxxx-31 2.7 2.9 3.1 2 21 c460ut190-sxxxx-31 2.7 2.9 3.1 2 21 c470ut190-sxxxx-31 2.7 2.9 3.1 2 22 c527ut190-sxxxx-31 2.7 3.0 3.2 2 35 mechanical specifcations c xxxut190-sxxxx-31 description dimension tolerance p-n junction area (m) 160 x 160 25 chip top area (m) 190 x 190 25 chip bottom area (m) 150 x 150 25 chip thickness (m) 50 10 au bond pad diameter (m) 85 -10/+15 au bond pad thickness (m) 1.2 0.5 backside contact metal area (m) 80 x 80 25 notes: 1. maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the minimum esd ratings shown. the esd classifcation of class 2 is based on sample testing according to mil-std-883e. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 5 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics measured in an integrating sphere using illuminance e. 4. caution: to obtain optimum output effciency, the amount of epoxy used should be characterized based upon the specifc application. copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. cpr3ep rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
3 standard bins for cxxxut190-sxxxx-31 led chips are sorted to the radiant fux and dominant wavelength bins shown. sorted die sheets contain die from only one bin. sorted die kit (cxxx ut190-s xxxx -31) orders may be flled with any or all bins (cxxx ut190- xxxx -31) contained in the kit. all radiant fux values are measured at if = 20 ma and all dominant wavelength values are measured at if = 5 ma. dominant wavelength c450ut190-s1200-31 c450ut190-0317-31 c450ut190-0318-31 C450UT190-0319-31 c450ut190-0320-31 c450ut190-0313-31 c450ut190-0314-31 c450ut190-0315-31 c450ut190-0316-31 c450ut190-0309-31 c450ut190-0310-31 c450ut190-0311-31 c450ut190-0312-31 c450ut190-0305-31 c450ut190-0306-31 c450ut190-0307-31 c450ut190-0308-31 447.5 nm 450 nm 452.5 nm 445 nm 455 nm 18.0 mw 16.0 mw 14.0 mw 12.0 mw radiant flux c460ut190-s1200-31 c460ut190-0317-31 c460ut190-0318-31 c460ut190-0319-31 c460ut190-0320-31 c460ut190-0313-31 c460ut190-0314-31 c460ut190-0315-31 c460ut190-0316-31 c460ut190-0309-31 c460ut190-0310-31 c460ut190-0311-31 c460ut190-0312-31 c460ut190-0305-31 c460ut190-0306-31 c460ut190-0307-31 c460ut190-0308-31 dominant wavelength 457.5 nm 460 nm 462.5 nm 455 nm 465 nm radiant flux 18.0 mw 16.0 mw 14.0 mw 12.0 mw copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. cpr3ep rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
4 standard bins for cxxxut190-sxxxx-31 (continued) led chips are sorted to the radiant fux and dominant wavelength bins shown. sorted die sheets contain die from only one bin. sorted die kit (cxxx ut190-s xxxx -31) orders may be flled with any or all bins (cxxx ut190- xxxx -31) contained in the kit. all radiant fux values are measured at if = 20 ma and all dominant wavelength values are measured at if = 5 ma. c470ut190-s1000-31 c470ut190-0313-31 c470ut190-0314-31 c470ut190-0315-31 c470ut190-0316-31 c470ut190-0309-31 c470ut190-0310-31 c470ut190-0311-31 c470ut190-0312-31 c470ut190-0305-31 c470ut190-0306-31 c470ut190-0307-31 c470ut190-0308-31 c470ut190-0301-31 c470ut190-0302-31 c470ut190-0303-31 c470ut190-0304-31 dominant wavelength radiant flux 16.0 mw 14.0 mw 12.0 mw 10.0 mw 467.5 nm 470 nm 472.5 nm 465 nm 475 nm c527ut190-s0300-31 c527ut190-0307-31 c527ut190-0308-31 c527ut190-0309-31 c527ut190-0304-31 c527ut190-0305-31 c527ut190-0306-31 c527ut190-0301-31 c527ut190-0302-31 c527ut190-0303-31 dominant wavelength radiant flux 7.0 mw 5.0 mw 3.0 mw 525 nm 530 nm 535 nm 520 nm copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. cpr3ep rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
5 standard bins for cxxxut190-sxxxx-31 led chips are sorted to the radiant fux and dominant wavelength bins shown. sorted die sheets contain die from only one bin. sorted die kit (cxxx ut190-s xxxx -31) orders may be flled with any or all bins (cxxx ut190- xxxx -31) contained in the kit. all radiant fux values are measured at if = 20 ma and all dominant wavelength values are measured at if = 5 ma. 0% 100% 200% 300% 400% 500% 0 5 10 15 20 25 30 relative light intensity if (ma) relative intensity vs. forward current - 12 - 10 - 8 - 6 - 4 - 2 0 2 4 0 5 10 15 20 25 30 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0% 100% 200% 300% 400% 500% 0 5 10 15 20 25 30 relative light intensity if (ma) relative intensity vs. forward current - 12 - 10 - 8 - 6 - 4 - 2 0 2 4 0 5 10 15 20 25 30 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 if (ma) vf (v) forward current vs. forward voltage copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. cpr3ep rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
6 radiation pattern this is a representative radiation pattern for the ultrathin chip led product. actual patterns will vary slightly for each chip. copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and g?sic are registered trademarks, and ultrathin and ut are trademarks of cree, inc. cpr3ep rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
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